Method for fabricating semiconductor device using tungsten as sacrificial hard mask
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 28, 2008
Grant Date -
Apr 13, 2006
app pub date -
Jun 10, 2005
filing date -
Oct 12, 2004
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention relates to a method for fabricating a semiconductor device using tungsten as a sacrificial hard mask material. The method includes the steps of: forming a layer on an etch target layer; forming a photoresist pattern on the layer; etching the layer by using the photoresist pattern as an etch mask along with use of a plasma containing CHF.sub.3 gas to form a sacrificial hard mask; and etching the etch target layer by using at least the sacrificial hard mask as an etch mask, thereby obtaining a predetermined pattern.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully