Cathode structure for field emission device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20060066217A1
SERIAL NO

10952352

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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To avoid arcing and shorting within a field emission device, a bottom portion of a gate electrode is protected with an insulating material to avoid or reduce arcing among the electrodes and the electron emitters in the device. In a method for manufacturing such a field emission device, an emitter hole is formed through an insulating layer such that a portion of the gate electrode overhangs the hole and is protected on its underside by the insulating layer. The device can be used in display systems, such as CNT flat panel displays.

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Patent Owner(s)

Patent OwnerAddress
JAPAN ASIA INVESTMENT CO LTDAKASAKA EIGHT-ONE BLDG 2-13-5 NAGATA-CHO CHIYO TOKYO DC 100-8972
ARROW CAPITAL CORPORATION3390 OLD TOWN AVENUE SUITE B-210 SAN DIEGO CA 92110

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Son, Jong Woo San Jose, CA 4 54

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