Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus
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United States of America Patent
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app pub date -
Oct 19, 2005
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Nov 14, 2001
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Abstract
A Cl.sub.2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl.sub.2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.
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