Novel deposition of SiON dielectric films
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United States of America Patent
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Issued Date -
Mar 9, 2006
app pub date -
Sep 7, 2004
filing date -
Sep 7, 2004
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Abandoned
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Abstract
This disclosure discusses the forming of gate dielectrics in semi conductor devices, and more specifically to forming thin high-k dielectric films on silicon substrates typically using chemical vapor deposition or atomic layer deposition processes. The current invention forms a dielectric film in a single film-forming step using a vapor phase silicon precursor in conjunction with a nitrogen source and an oxygen source for the deposition of a silicon oxy nitride (SiON) film of desired stochiometry. The vapor phase silicon precursor, nitrogen source and oxygen source are carbon and chlorine free, eliminating the undesirable effects of carbon and chlorine in the dielectric film or solid deposits in the chamber exhaust.
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