Epitaxial structure and fabrication method of nitride semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Mar 9, 2006
app pub date -
Sep 3, 2004
filing date -
Sep 3, 2004
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A structure and a fabrication method for a nitride semiconductor device are provided so that the device has a lower defect density resulted from incompatible lattice constants between its constituent layers. The nitride semiconductor device contains a substrate, at least a first intermediate layer made of aluminum-gallium-indium-nitride (Al.sub.1-x-yGa.sub.xIn.sub.yN) at least a second intermediate layer made of silicon-nitride (Si.sub.iN.sub.j) or magnesium-nitride (Mg.sub.mN.sub.n), and a nitride epitaxial layer. The second intermediate layer is used to form a mask so that the subsequent epitaxial growth would have a smaller defect density and a better epitaxial quality.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully