Nitride epitaxial layer structure and method of manufacturing the same
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United States of America Patent
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Issued Date -
Mar 9, 2006
app pub date -
Sep 8, 2004
filing date -
Sep 8, 2004
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Abandoned
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Abstract
Disclosed is a nitride epitaxial layer structure and manufacturing method thereof. The structure includes a substrate, which is used as the basic supporting material, a first immediate layer formed by stacking an appropriate thickness of high temperature aluminum-gallium-indium-nitride (Al.sub.1-x-yGa.sub.xIn.sub.yN) on the substrate, a second immediate layer formed by re-crystallizing an appropriate thickness of low temperature aluminum-gallium-indium-nitride (Al.sub.1-x-yGa.sub.xIn.sub.yN) stacked on the first immediate layer, and a nitride epitaxial layer formed by stacking nitride epitaxial material on the second immediate layer. The structure so formed can improve and alleviate the problem of excessively high defect density of the low temperature aluminum-gallium-indium-nitride (Al.sub.1-x-yGa.sub.xIn.sub.yN), and thus be able to enhance the characteristics of its elements.
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