Lateral PNP transistor and the method of manufacturing the same
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United States of America Patent
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Issued Date -
Mar 2, 2006
app pub date -
Sep 1, 2004
filing date -
Sep 1, 2004
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Abandoned
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Abstract
The present invention relates to a lateral PNP transistor and the method of manufacturing the same. The medium doping N-type base area and the light doping P.sup.- collector area were first introduced in the structure before the formation of P.sup.+ doping emitter area and the collector area. The emitter-base-collector doping profile in the lateral and the base width of LPNP were similar to NPN. The designer can optimize the doping profile and area size of each area according to the request of the current gain (Hfe), collector-base breakdown voltage (BVceo), and Early voltage (VA) of LPNP transistor. These advantages may cause to reduce the area and enhance performance of the LPNP transistor.
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