Gallium-nitride based light emitting diode structure

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United States of America Patent

APP PUB NO 20060043394A1
SERIAL NO

10932802

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Abstract

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A gallium-nitride(GaN) based light emitting diode (LED) structure utilizing materials having compatible lattice constant is provided. When aluminum-indium-nitride (Al.sub.xIn.sub.1-xN, 0

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Patent OwnerAddress
FORMOSA EPITAXY INCORPORATEDNO 99 LUN-YUAN 1ST RD LUN-TAN TAOYUAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chien, Fen-Ren Yonghe City, TW 63 682
Tu, Ru-Chin Tainan City, TW 17 69
Wen, Tzu-Chi Tainan City, TW 17 97
Wu, Liang-Wen Banciao City, TW 34 205
Yu, Cheng-Tsang Wufong Township, TW 18 98

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