Trench MOSFET having drain-drift region comprising stack of implanted regions
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United States of America Patent
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app pub date -
Aug 23, 2005
filing date -
Jul 3, 2001
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Abandoned
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Abstract
A trench MOSFET is formed in a structure which includes a P-type epitaxial layer overlying an N+ substrate. A trench is formed in the epitaxial layer. A drain-drift region is formed by implanting N-type dopant through the bottom of the trench at different energies, creating a stack of N-type regions that extend from the bottom of the trench to the substrate. The energy and implant dose of the regions are set such that doping concentration of the drain-drift region increases monotonically with increasing depth below the bottom of the trench.
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