Method for fabricating semiconductor device using amorphous carbon layer as sacrificial hard mask
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 4, 2008
Issued Date -
N/A
app pub date -
Jun 10, 2005
filing date -
Jul 29, 2004
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Disclosed is a method for fabricating a semiconductor device by using an amorphous carbon layer as a sacrificial hard mask. The method includes the steps of: forming an amorphous carbon layer on an etch target layer; forming a photoresist pattern on the amorphous carbon layer; etching the amorphous carbon layer by using the photoresist pattern to form a sacrificial hard mask; and etching the etch target layer by using the sacrificial hard mask to form a predetermined pattern.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully