Method for fabricating L10 phase alloy film

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United States of America Patent

APP PUB NO 20060021871A1
SERIAL NO

10901789

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Abstract

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A method for fabricating an L1.sub.0 alloy film is provided. The method includes steps of (a) providing a substrate; (b) heating the substrate as a preheated substrate at a first temperature ranged from 100.degree. C. to 600.degree. C. for a time period ranged from 5 minutes to 120 minutes, and then cooling the substrate to room temperature in the sputtering chamber; (c) depositing an alloy film on the preheated substrate; and (d) annealing the alloy film at a second temperature ranged from 200.degree. C. to 500.degree. C. to form the alloy film.

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Patent OwnerAddress
CHANG CHING-RAY2F -1 NO 12 LANE 54 SECTION 3 XINSHENG SOUTH ROAD DA-AN DISTRICT TAIPEI CITY 106

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Ching-Ray Taipei, TW 20 63
Chang, Huang-Wei Taipei, TW 4 25
Chen, Sheng-Chi Taipei, TW 11 71
Chou, Chun-Yuan Taipei, TW 19 181
Hsu, Jen-Hwa Taipei, TW 11 36
Huang, Huei-Li Taipei, TW 3 11
Kuo, Po-Cheng Taipei, TW 19 220
Lee, Chang-Tai Taipei, TW 5 8
Sun, An-Cheng Taipei, TW 10 19

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