High dielectric strength monolithic Si3N4
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United States of America Patent
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Issued Date -
Jan 19, 2006
app pub date -
Jul 15, 2004
filing date -
Jul 15, 2004
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Abstract
A monolithic silicon nitride material and a method of manufacturing the material. The material is disclosed in a range of composition variations all of which exhibit high dielectric strengths suitable for use in insulator applications. Moreover, the material retains its dielectric and structural integrity even at elevated temperature, such as above 800 degrees Celsius. One embodiment of the method of manufacture is an SRBSN process comprising powder batching, powder pressing, binder removal, nitriding and sintering. The second embodiment is an SSN process comprising powder batching, binder removal and sintering. In either embodiment, the resulting Si.sub.3N.sub.4 composition also comprises up to 20% by weight of Al.sub.2O.sub.3, up to 15% by weight rare earth oxides and up to 5% by weight of other constituents.
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