Nitride and polysilicon interface with titanium layer
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United States of America Patent
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Issued Date -
Jan 5, 2006
app pub date -
Mar 18, 2005
filing date -
Sep 18, 2002
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Abandoned
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Abstract
A conductive structure in an integrated circuit (12), and a method of forming the structure, is provided that includes a polysilicon layer (30), a thin layer containing titanium over the polysilicon, a tungsten nitride layer (34) over the titanium-containing layer and a tungsten layer over the tungsten nitride layer. The structure also includes a silicon nitride interfacial region (38) between the polysilicon layer and the titanium-containing layer. The structure withstands high-temperature processing without substantial formation of metal silicides in the polysilicon layer (30) and the tungsten layer (32), and provides low interface resistance between the tungsten layer and the polysilicon layer.
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