Dielectric barrier discharge method for depositing film on substrates

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United States of America Patent

SERIAL NO

11210589

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Abstract

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A method of coating at least one wafer with film. The method includes first flowing at least one purge gas and at least one reactant gas at least partially through an activation space of at least one electrode set. Next, placing a wafer beneath the activation space of the at least one electrode set. Finally, supplying AC power to at least one electrode set whereby a dielectric barrier is discharged at least partially within the activation space, from which the film descends onto the wafer.

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Patent Owner(s)

Patent OwnerAddress
UNIVERSITY OF NEW HAMPSHIREDURHAM NH 03824

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Amato-Wierda, Carmela C Durham, NH 2 9

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