Method for introducing impurities and apparatus for introducing impurities
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United States of America Patent
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May 4, 2010
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app pub date -
Jun 15, 2005
filing date -
Feb 19, 2003
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Abstract
A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.
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