Importance

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Abstract

Low mass-per-unit-area plastic film, preferably polyimide, prepared by a process of controlled treating of a supply of plastic film, possibly with one surface reflectively coated, at a microlithography workstation with included photoablation optics. This treatment achieves significant controlled removal of material in a selected pattern by providing relative motion between untreated plastic film and the workstation's photoablation optics while controlling photoablation of a pattern in the film. The material has a significant quantity of the mass of its plastic removed by photoablation, leaving a tessellated pattern of ridges surrounding individual wells. The resulting low-mass, rip-resistant film retains the general attributes of a large-area plastic film. The treated film also retains its reflective surface, on which amorphous silicon may be deposited. The silicon may be thereafter crystallized, utilizing the same optics, and used for fabrication of microelectronics.

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First Claim