Ferroelectric memory
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United States of America Patent
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Feb 20, 2007
Grant Date -
Dec 1, 2005
app pub date -
Dec 30, 2004
filing date -
May 28, 2004
priority date (Note) -
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Abstract
A ferroelectric memory including a ferroelectric capacitor to store data; a bit line inputting and outputting data with respect to the ferroelectric capacitor; a control circuit having a first field effect transistor to be connected to the bit line and a reference potential, and to lower potential of the bit line when the bit line is connected to the ferroelectric capacitor; a reference ferroelectric capacitor to store fixed data; a reference bit line to input and output data with respect to the reference ferroelectric capacitor; and a second field effect transistor to be connected to the reference bit line and the reference potential, in which the first and second field effect transistors configure a current mirror circuit, is provided.
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