Corrosion-inhibiting cleaning compositions for metal layers and patterns on semiconductor substrates
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United States of America Patent
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Issued Date -
Nov 24, 2005
app pub date -
Jan 6, 2005
filing date -
May 19, 2004
priority date (Note) -
Abandoned
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Abstract
A corrosion-inhibiting cleaning composition for semiconductor wafer processing includes hydrogen peroxide at a concentration in a range from about 0.5 wt % to about 5 wt %, sulfuric acid at a concentration in a range from about 1 wt % to about 10 wt %, hydrogen fluoride at a concentration in a range from about 0.01 wt % to about 1 wt %; an azole at a concentration in a range from about 0.1 wt % to about 5 wt % and deionized water. The azole operates to inhibit corrosion of a metal layer being cleaned by chelating with a surface of the metal layer during a cleaning process.
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