Thyristor component with improved blocking capabilities in the reverse direction
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United States of America Patent
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app pub date -
Apr 28, 2005
filing date -
Oct 30, 2002
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Abstract
A thyristor comprises a semiconductor body with a front and back face, an edge, a first semiconductor zone, embodied in the region of the rear face and a second semiconductor zone, adjacent to the first semiconductor zone, whereby the edge has a bevelled embodiment in the region of the transition between the first and second semiconductor zones, at least one third semiconductor zone, arranged in the region of the front face of the semiconductor body and at least one fourth semiconductor zone, arranged between the at least one third semiconductor zone and the second semiconductor zone. The fourth semiconductor zone terminates before the edge in the lateral direction of the semiconductor body, in order to reduce the amplification of a parasitic bipolar transistor formed in the region of the edge by the fourth semiconductor zone, the second semiconductor zone and the first semiconductor zone.
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