Emitter structure with a protected gate electrode for an electron-emitting device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Oct 27, 2005
app pub date -
Apr 14, 2005
filing date -
Apr 15, 2004
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A cathode structure of a field emission device includes a gate electrode that is protected by a passivation layer. In one method for manufacturing such a field emission device, an emitter hole is formed through an insulating layer such that the passivation layer overhangs the gate layer, which overhangs an insulating layer. When used in a display system, the gate layer is exposed to an emitter electrode but shielded from an anode.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully