Image sensor and method for fabricating the same
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United States of America Patent
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Issued Date -
Oct 20, 2005
app pub date -
Mar 3, 2005
filing date -
Mar 31, 2004
priority date (Note) -
Abandoned
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Abstract
Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor applied by an N-channel stop layer and a method for fabricating the same. The image sensor includes: a P-type semiconductor substrate including an active region provided with a field oxide layer and a pixel region provided with a photodiode region, a native N-channel metal oxide semiconductor (NMOS) transistor region and a normal NMOS transistor region; an N-channel stop layer including a wide width in a horizontal direction and formed around the field oxide layer; and a P-type well formed in a low depth on the P-type semiconductor substrate of the normal NMOS transistor region.
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