Method for producing a hybrid organic silicon field effect transistor structure
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United States of America Patent
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Issued Date -
Oct 13, 2005
app pub date -
May 9, 2005
filing date -
May 17, 2002
priority date (Note) -
Abandoned
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Abstract
The invention relates to a method for producing a hybrid organic silicon field effect transistor structure, comprising the steps of: i) providing a group IV element based semiconductor substrate provided with a source region, gate region and drain region, having at least in the gate region a surface with hydrogen terminated group IV elements; and ii) covering at least the gate region with an organic monolayer by covalently reacting monolayer forming molecules with terminated hydrogen of the group IV elements at the surface, which monolayer forming molecules comprise a proximal terminated hydrogen reactive group and a spacer group and to a hybrid organic silicon field effect transistor structure as obtainable with the method.
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