Vertical-cavity surface emitting laser diode
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United States of America Patent
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Issued Date -
Oct 13, 2005
app pub date -
Jun 8, 2005
filing date -
Sep 22, 2003
priority date (Note) -
Abandoned
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Abstract
The present invention provides a VCSEL (vertical-cavity surface emitting laser) diode, in which a p-type cladding layer is formed on an active layer and surrounded with an insulation edge. An annular p-type electrode is formed on the ptype cladding layer close to the insulation edge and an upper DBR mirror is formed therewithin. According to the present invention, light beams emitting from the active layer will not be shielded by a central electrode and brightness of the laser diode is improved.
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