Semiconductor integrated circuit having polysilicon fuse, method of forming the same, and method of adjusting circuit parameter thereof
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Oct 13, 2005
app pub date -
Mar 28, 2005
filing date -
Apr 12, 2004
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
Exemplary semiconductor integrated circuits are disclosed that include polysilicon fuses that can be programmed by supplying programming currents. The fuse is formed of a polysilicon film having a sheet resistance of 1.7 to 6 k.OMEGA./sq. As a result, the polysilicon fuse has a high resistance and can be programmed with low current. Accordingly, the fuse can be programmed with a high yield even when the programming current is supplied through a wire having a high resistance.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully