Apparatus and method for depositing thin film on wafer using remote plasma
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United States of America Patent
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N/A
Issued Date -
Oct 13, 2005
app pub date -
Oct 19, 2004
filing date -
Apr 19, 2002
priority date (Note) -
Abandoned
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Abstract
A remote-plasma ALD apparatus includes a reaction chamber, an exhaust line for exhausting gas from the reaction chamber, a first reactive gas supply unit for selectively supplying a first reactive gas to the reactant chamber or the exhaust line, a first reactive gas transfer line for connecting the first reactive gas supply unit and the reactant chamber, a first bypass line for connecting the first reactive gas supply line and the exhaust line, a radical supply unit for generating radicals and selectively supplying the radicals to the reactant chamber or the exhaust line, a radical transfer line for connecting the radical supply unit and the reactant chamber, a second bypass line for connecting the radical supply unit and the exhaust line, and a main purge gas supply unit for supplying a main purge gas to the first reactant transfer line and/or the radical transfer line.
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