Electrostatic discharge protection device and method using depletion switch
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United States of America Patent
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app pub date -
May 25, 2005
filing date -
Dec 3, 2002
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Abstract
An integrated circuit device for electrostatic discharge protection that includes a semiconductor substrate, a lightly doped region of a first dopant type formed in the substrate, a first diffusion region of the first dopant type formed at least partially in the lightly doped region, a second diffusion region of the first dopant type formed at least partially in the lightly doped region and spaced apart from the first diffusion region, a resistive path defined by the lightly doped region, the first and the second diffusion regions, and a third diffusion region of a second dopant type formed in the lightly doped region, and disposed between and spaced apart from the first and the second diffusion regions, wherein the third diffusion region keeps the resistive path at a low resistive state until a normal operation period occurs.
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