Arsenic dopants for pulling of silicon single crystal, process for producing thereof and process for producing silicon single crystal using thereof
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United States of America Patent
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Issued Date -
Sep 29, 2005
app pub date -
Mar 22, 2005
filing date -
Mar 29, 2004
priority date (Note) -
Abandoned
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Abstract
Silicon single crystal is pulled by the Czochralski method, using an As dopant comprising a mixed sintered compact of arsenic and silicon, the molar ratio of silicon being not smaller than 35% and not greater than 55% relative to arsenic.
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