Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof
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United States of America Patent
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Apr 7, 2009
Grant Date -
Sep 22, 2005
app pub date -
Mar 17, 2004
filing date -
Mar 17, 2004
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Abstract
This invention relates to a semiconductor device making use of a highly thermal robust metal electrode as gate material. In particular, the development of Hafnium Nitride as a metal gate electrode (or a part of the metal gate stack) is taught and its manufacturing steps of fabrication with different embodiments are shown.
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