Method for shaping thin films in the near-edge regions of in-process semiconductor substrates
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United States of America Patent
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app pub date -
May 18, 2005
filing date -
Apr 26, 2002
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Abstract
A method for shaping and/or encapsulating near-edge regions of a substrate wafer is described. A housing provides channels for flowing a reactive gas towards the wafer edge. The reactive gas is directed towards the wafer edge for removing or depositing a thin film on the wafer edge. Gasses are exhausted downstream from the flow of the reactive gas. A second channel in the housing directs a flow of diluent/quenching gas onto the wafer for exhausting of the diluent/quenching gas and the reactive gas away from the wafer. The method may also provide a sequence of process steps, for example, selectively etching of a material on the wafer, etching of second material on the wafer and depositing an encapsulating material layer on the wafer.
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