Method for forming a self-aligned germanide and devices obtained thereof
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United States of America Patent
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Mar 8, 2005
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Mar 8, 2004
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Abstract
A method for removing unreacted metal from a germanium layer, a germanide layer and or a dielectric material. The method includes removing the unreacted metal using a chemical composition that includes one or more hydrohalides, such as in an aqueous form. In certain embodiments, the chemical composition may also include H.sub.2SO.sub.4. Also, in certain embodiments, the chemical composition may be heated to increase the etch rate of the unreacted metal and/or improve the etch selectivity to the germanium, the germanide and/or the dielectric material.
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