P-type electrodes in gallium nitride-based light-emitting devices
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United States of America Patent
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Issued Date -
Aug 18, 2005
app pub date -
Feb 14, 2005
filing date -
Feb 13, 2004
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Abstract
An improved p-type electrode for a p-type gallium-nitride based semiconductor material is disclosed that includes at least one layer of indium-tin-oxide. The electrode can include the indium-tin-oxide layer(s) such that at least one of the indium-tin-oxide layers is in contact with the p-type semiconductor layer. Alternatively, the electrode can further include a first electrode layer in contact with the p-type semiconductor layer. In this example, the indium-tin-oxide layer(s) is over the first electrode layer. The first electrode layer includes at least one metal selected from the group consisting of nickel oxide, molybdenum oxide, ruthenium oxide and zinc oxide, and/or at least one non-oxidizing metal.
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