Monolithic integration and enhanced light extraction in gallium nitride-based light-emitting devices
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United States of America Patent
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Issued Date -
Aug 18, 2005
app pub date -
Feb 14, 2005
filing date -
Feb 13, 2004
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Abandoned
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Abstract
An integrated light-emitting device includes multiple p-n diodes integrated monolithically on an insulating substrate. The p-n diodes are of monolithic semiconductor materials over the single substrate. The p-n diodes can be all light-emitting diodes or a combination of light-emitting and ESD-protection diodes. The p-n diodes may have at least one beveled sidewall to enhance light extraction out of the light-emitting diodes. A method for producing such integrated light-emitting device and a method for producing such p-n diode that includes at least one beveled sidewall are also disclosed.
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