Method for solid-state single crystal growth
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United States of America Patent
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Issued Date -
Jul 14, 2005
app pub date -
Sep 14, 2004
filing date -
Oct 11, 2002
priority date (Note) -
Abandoned
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Abstract
The invention relates to a method for growing single crystals in polycrystalline bodies in which abnormal grain growth occurs. The method is characterized by controlling the average size of matrix grains of polycrystalline bodies in which abnormal grain growth occurs, whereby reducing the number density (number of abnormal grains/unit volume) of abnormal grains to generate only a extremely limited number of abnormal grains or inhibit the generation of abnormal grains within the extent of guaranteeing the driving force of abnormal grain growth. Therefore, the invention grows continuously only the extremely limited number of abnormal grains or only the seed single crystal into the polycrystalline body to obtain a large single crystal having a size larger than 50 mm.
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