Apparatus for atomic layer deposition
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United States of America Patent
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Issued Date -
Jul 7, 2005
app pub date -
Dec 31, 2003
filing date -
Dec 31, 2003
priority date (Note) -
Abandoned
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Abstract
A trap with a residence time at least equal to one complete cycle time of an atomic layer deposition (ALD) process traps the gaseous effluent from a reaction chamber and reaction products before the effluent can enter a backing pump. The trap may be connected directly to the reaction chamber or indirectly through a process pump. The trap is advantageously used in atomic layer deposition processes.
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