Structure and method for protecting substrate of an active area

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United States of America Patent

APP PUB NO 20050142773A1
SERIAL NO

10864371

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Abstract

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A structure and method are provided for protecting a substrate of an active area adjacent to an isolation region. A substrate including an isolation region is provided, wherein a gate is disposed on the substrate adjacent to the isolation region. A sacrificial protective layer is deposited on the substrate and then etched back to form a sidewall protective layer on the sidewall of the gate, covering a portion of isolation region to protect the substrate adjoining the gate and the isolation region.

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Patent Owner(s)

Patent OwnerAddress
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION123 PARK AVE-3RD HSINCHU SCIENCE PARK HSINCHU 300-77

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Hsu-Li Hsinchu City, TW 7 92
Yang, Jui-Hsiang Hsinchu City, TW 16 85

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