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Abstract

The present invention provides a self-aligned laser structure that can be fabricated on a p-substrate and provides a means for limiting the leakage current thereby improving the overall efficiency of the structure. The waveguide laser structure comprises a first series of layers deposited in sequence upon a p-InP, p-GaAs or p-GaN substrate or other form of p-substrate, wherein these layers form the p-clad layer. An active layer is subsequently deposited upon this first series of layers. A blocking layer of insulating or semi-insulating material is deposited upon the active layer, wherein this blocking layer has a trench formed therein, wherein this semi-insulating layer or layers are epitaxially deposited. The blocking layer provides a means for limiting current flow therethrough, thereby reducing leakage current. Upon the blocking layer are deposited a second series of layers completing the laser structure, wherein this second series of layers form the n-clad layer. Since the n-clad layer contains more than one material, the structure provides lateral waveguiding. Upon the completion of the deposition of all of the layers, a positive electrode is formed on the bottom surface of the first series of layers and a negative electrode is formed on the top of the second series of layers.

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First Claim