Method for improving the quality of heterostructure
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United States of America Patent
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Issued Date -
Jun 16, 2005
app pub date -
May 5, 2004
filing date -
Dec 10, 2003
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Abandoned
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Abstract
A method for improving the quality of a heterostructure that includes at least two layers of material that have different thermal expansion coefficients is described. The method includes applying a cap layer to the exposed surface of at least one of the layers. The cap layer is made of a material and has a thickness sufficient to reduce defects in at least one of the two layers during subsequent thermal treatment of the heterostructure. The present technique is a reliable and effective method for improving the quality of a heterostructure.
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