Laser crystallization apparatus and laser crystallization method

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United States of America Patent

SERIAL NO

11003021

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Abstract

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The present invention relates to a laser crystallization apparatus and a laser crystallization method that can achieve high throughput even when a CW laser is used. The laser crystallization apparatus includes a movable stage supporting a substrate on which a semiconductor layer is formed, a device directing a laser beam to a plurality of optical paths in a time-division manner, and optical devices condensing and applying the laser beam passing through the optical paths to the semiconductor layer on the substrate supported by the stage. A first region of the semiconductor layer is scanned with the laser beam in one direction and a second region of the semiconductor layer is scanned with the laser beam in the reverse direction.

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Patent Owner(s)

Patent OwnerAddress
SHARP KABUSHIKI KAISHA22-22 NAGAIKE-CHO ABENO-KU OSAKA 545-8522

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sasaki, Nobuo Kawasaki, JP 114 2781
Uzuka, Tatsuya Shinjuku, JP 9 52

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