Apparatus and process for physical vapor deposition
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United States of America Patent
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Issued Date -
Jun 16, 2005
app pub date -
Aug 30, 2004
filing date -
Dec 16, 2003
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
An apparatus for physical vapor deposition (PVD) is described. The apparatus includes a chamber, a target back plate, a wafer base, a target and a mobile magnetron device. The target back plate is located over a top surface of the chamber, and the wafer base is located over a bottom surface of the chamber. The target is located over a surface of the target back plate facing the wafer base. Further, the mobile magnetron device is located outside the chamber and above the target. The PVD apparatus can be used that the distance between a magnetic pole of the mobile magnetron device and a bombardment surface of the target is kept constant by adjusting the position of the mobile magnetron device. Therefore, the intensity of magnetic field induced throughout the bombardment surface of the target can also be maintained at a constant value.
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