Field effect transister structures
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jun 2, 2005
app pub date -
Jun 21, 2004
filing date -
Jun 20, 2003
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A structure comprising a field effect transistor (FET) comprising at least one source rail with at least one source finger, at least one drain rail with at least one drain finger, and at least one serpentine gate having a plurality of gate fingers, said serpentine gate serpentining between said at least one source finger and said at least one drain finger; and at least one feedforward capacitor asymmetrically coupled with said FET via at least one gate rail. The serpentine gate may include first and second ends that are open at one end or closed at one end and the serpentine gate may include first and second ends that are connected to the at least one gate rail. The structure of one embodiment of the present invention may further include the FET being serially connected with at least one additional FET.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully