Light detector with enhanced quantum efficiency
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United States of America Patent
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Issued Date -
Jun 2, 2005
app pub date -
Sep 10, 2004
filing date -
Jul 23, 2003
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Abandoned
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Abstract
A semiconductor-based, especially a silicon-based, light detector, comprising a detector body (1.1) having a detector surface (1.2) and a covering layer (2) which comprises at least one first layer (2.1) and which is arranged on the detector surface (1.2), wherein, to enhance the quantum efficiency, the covering layer (2) has a transmittance in at least one working wavelength range which is higher than the transmittance of a covering layer consisting of SiO.sub.2 of the same thickness.
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