High temperature laser diode
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United States of America Patent
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Issued Date -
May 12, 2005
app pub date -
Nov 5, 2004
filing date -
Nov 6, 2003
priority date (Note) -
Abandoned
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Abstract
A semiconductor laser structure having confinement layers to confine electrons to an active region (quantum wells) and having separate antimonide-based cladding layers to provide additional electron confinement and photon confinement is suited to high temperature operation. The structure is suitable for lasing across telecommunications wavelengths from 980 nm to 1.55 .mu.m (microns). The cladding layer uses AlAsSb which can be lattice-matched to InP and can be used to achieve large conduction band offsets. It is very useful for coolerless (without thermo-electric cooler) operation.
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