InGaN-based led
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United States of America Patent
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Issued Date -
Apr 21, 2005
app pub date -
Aug 10, 2004
filing date -
Oct 16, 2003
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A blue LED epitaxial wafer grown on an Al.sub.2O.sub.3 substrate, the blue LED epitaxial wafer having a contact electrode on the bottom side after removal of the Al.sub.2O.sub.3 substrate, conducting terminals formed on the top side, and a substitute substrate selected from chrome, tungsten, molybdenum, copper, copper chrome alloy, copper molybdenum alloy, copper tungsten alloy, molybdenum tungsten alloy, or their combination alloy and bonded to the top side and connected to the conducting terminals.
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