Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
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United States of America Patent
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Issued Date -
Apr 14, 2005
app pub date -
Oct 6, 2004
filing date -
Oct 20, 1999
priority date (Note) -
Abandoned
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Abstract
Plasma systems and methods for supplying activation energy to remove cross-linked photoresist crust using ion bombardment of the substrate from a plasma, at reduced temperature, achieved in part by operating the processing chamber at low pressures. Reduced temperatures prevent 'popping' of the photoresist which can cause particulate contamination. The gas flow may comprise a principal gas, an inert diluent gas, and an additive gas. Principal gases for HDIS may comprise oxygen, hydrogen, and water vapor at pressures less than about 200 mTorr and a bias may be applied to the substrate support. When low-k dielectric material is present on vertical surfaces, reduced ion bombardment on vertical surfaces may be used, and a protective layer may be deposited on those surfaces.
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