Method and system for forming a mask pattern, method of manufacturing a semiconductor device, system forming a mask pattern on data, cell library and method of forming a photomask
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United States of America Patent
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Sep 22, 2009
Grant Date -
Mar 24, 2005
app pub date -
Sep 3, 2004
filing date -
Sep 4, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of forming a mask pattern comprises the following steps. A second cell library is prepared by making process proximity effect correction with respect to cell patterns stored in a first cell library. The second cell library stores corrected cell patterns. A first corrected cell pattern and a second corrected cell pattern of the corrected cell patterns are placed so that an edge of the first corrected cell pattern and an edge of the second corrected cell pattern contact or come close to or overlap each other. A boundary pattern at the boundary neighborhood between the first corrected cell pattern and the second corrected cell pattern is extracted. Process proximity effect correction is made with respect to the boundary pattern.
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