Plating method and plating solution
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United States of America Patent
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Issued Date -
Mar 3, 2005
app pub date -
Jul 7, 2004
filing date -
Jul 9, 2003
priority date (Note) -
Abandoned
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Abstract
The present invention provides a plating method which can embed copper in interconnect recesses, such as vias and interconnect trenches, having an opening width or size of several tens of .mu.m and an aspect ratio of at least 1.5. The plating method comprises: providing a substrate having interconnect recesses, whose surfaces are covered with a conductive layer, formed in a surface of the substrate; bringing the surface of the substrate into contact with a plating solution containing copper ions, an organic or inorganic acid, chloride ions, a polymeric surfactant for suppressing electrodeposition, a sulfur-containing saturated organic compound for promoting the growth of a plated film, and a nitrogen-containing polymer for flattening a surface of the plated film; and applying a voltage between the conductive layer and an anode immersed in the plating solution.
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