Etching method for semiconductor device
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United States of America Patent
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Issued Date -
Feb 17, 2005
app pub date -
Aug 11, 2004
filing date -
Aug 12, 2003
priority date (Note) -
Abandoned
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Abstract
An etching method for a semiconductor device comprising the steps of: generating an etching species atmosphere above the semiconductor device having a step composed of a main surface and a sidewall; and applying an electric field to accelerate the etching species in one direction and a magnetic field along a plane that crosses the one direction at a specific angle so that the sidewall is etched.
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