Semiconductor device manufacturing method
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United States of America Patent
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Issued Date -
Feb 3, 2005
app pub date -
Jul 28, 2004
filing date -
Jul 29, 2003
priority date (Note) -
Abandoned
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Abstract
The CMP of laminated heterogeneous metal films is efficiently improved without changing the structure of a conventional CMP apparatus. The CMP of a portion where heterogeneous metal films are laminated is performed on the same platen of a CMP apparatus having a single-platen structure. These heterogeneous metal films are a first layer metal film made of a wiring conductive metal such as Cu, and a second layer metal film made of a barrier film conductive metal such as Ti or Ta. After the CMP of the first layer metal film by using a slurry for polishing the first layer metal film is performed, the wafer is retracted from a polishing pad within a polishing unit of the CMP apparatus. With this state, the polishing pad is cleaned and then the retracted wafer is returned. Then, the CMP of the second layer metal film is performed by supplying a slurry for polishing the second layer metal film. By providing the process of cleaning the polishing pad between the process of polishing of the first layer metal film and the process polishing of the second layer metal film, the CMP can be efficiently performed with a single-platen structure even if the slurry for polishing the first layer metal film and the slurry for polishing the second layer metal film have much different properties.
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