Thin film magnetic memory device reducing a charging time of a data line in a data read operation
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United States of America Patent
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Issued Date -
Feb 3, 2005
app pub date -
Sep 2, 2004
filing date -
Apr 23, 2002
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
During data reading, a sense enable signal is activated to start charging of a data line prior to formation of a current path including the data line and a selected memory cell in accordance with row and column selecting operations. Charging of the data line is completed early so that it is possible to reduce a time required from start of the data reading to such a state that a passing current difference between the data lines reaches a level corresponding to storage data of the selected memory cell, and the data reading can be performed fast.
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