All-around MOSFET gate and methods of manufacture thereof
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United States of America Patent
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Issued Date -
Jan 6, 2005
app pub date -
Jun 18, 2003
filing date -
Jun 18, 2003
priority date (Note) -
Abandoned
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Abstract
Metal oxide field effect transistor having a channel and a gate that surrounds the channel on four sides. Method of manufacture of the transistor includes processing the back of a silicon wafer to form a buried gate that is electrically connected to the gate of a conventional field effect transistor to form an all-around structure.
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